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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3503
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK3503 is an N-channel vertical MOS FET. Because it can be driven by a voltage as low as 1.5 V and it is not necessary to consider a drive current, this FET is ideal as an actuator for low-current portable systems such as headphone stereos and video cameras.
PACKAGE DRAWING (Unit: mm)
0.3 +0.1 -0 0.15 +0.1 -0.05
FEATURES
* Automatic mounting supported * Gate can be driven by a 1.5 V power source * Because of its high input impedance, there's no need to consider a drive current * Since bias resistance can be omitted, the number of components required can be reduced
1.6 0.1
0.8 0.1
3 0 to 0.1 2 0.2 +0.1 -0 0.5 0.5 0.6 0.75 0.05 1
1.0 1.6 0.1
ORDERING INFORMATION
PART NUMBER 2SK3503 PACKAGE SC-75 (USM)
1: Source 2: Gate 3: Drain
Marking: E1
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (Tc = 25C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT Tch Tstg
16 7.0 0.1 0.4 200 150 -55 to +150
V V A A mW C C
EQUIVALENT CIRCUIT
Drain
Total Power Dissipation (TC = 25C) Note2 Channel Temperature Storage Temperature
Gate
Body Diode
Notes 1. PW 10 s, Duty Cycle 1% 2. Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
Gate Protection Diode
Source
Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information.
Document No. D15395EJ2V0DS00 (2nd edition) Date Published November 2004 NS CP(K) Printed in Japan
The mark
shows major revised points.
2001
2SK3503
ELECTRICAL CHARACTERISTICS (TA = 25C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance
Note Note
SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3
TEST CONDITIONS VDS = 16 V, VGS = 0 V VGS = 7.0 V, VDS = 0 V VDS = 3.0 V, ID = 10 A VDS = 3.0 V, ID = 10 mA VGS = 1.5 V, ID = 1.0 mA VGS = 2.5 V, ID = 10 mA VGS = 4.0 V, ID = 10 mA VGS = 0 V VDS = 3.0 V f = 1 MHz VDD = 3.0 V, ID = 10 mA VGS = 3.0 V RG = 10
MIN.
TYP.
MAX. 1.0 3.0
UNIT
A A
V mS
0.5 20
0.8
1.1
Drain to Source On-state Resistance
20 7.0 5.0 10 13 3.0 15 70 100 110
50 15 12
pF pF pF ns ns ns ns
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time
Ciss Coss Crss td(on) tr td(off) tf
Note Pulsed
TEST CIRCUIT SWITCHING TIME
D.U.T. RL PG. RG VDD ID VGS 0 = 1 s Duty Cycle 1% ID
Wave Form
VGS VGS
Wave Form
0
10% 90%
VGS
90%
90%
ID
0 10% 10%
td(on) ton
tr
td(off) toff
tf
2
Data Sheet D15395EJ2V0DS
2SK3503
TYPICAL CHARACTERISTICS (TA = 25C)
TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 240
PT - Total Power Dissipation - mW
Mounted on ceramic substrate of 3.0 cm2 x 0.64 mm
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 50 2.0 V 40
ID - Drain Current - mA
Pulsed
200 160 120 80 40
1.8 V
30
20
1.6 V
10
1.4 V VGS = 1.2 V
0
30
60 90 120 150 180 TA - Ambient Temperature - C
210
0
2 3 4 1 VDS - Drain to Source Voltage - V
5
RDS(on) - Drain to Source On-state Resistance -
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 500
|yfs| - Forward Transfer Admittance - mS
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 TA = -25C Pulsed 100 50 VGS = 1.5 V 20 10 2.5 V 5 0.5 1 2 5 4.0 V 10 20 50 100 200 500
VDS = 3.0 V Pulsed TA = -25C 25C 75C
200 100
50
20
10 5 10 20 50 100 ID - Drain Current - mA 200
ID - Drain Current - mA TA = 75C
RDS(on) - Drain to Source On-state Resistance -
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 100 50 TA = 25C Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 200 100 50 VGS = 1.5 V TA = 75C Pulsed
20 10 5
VGS = 1.5 V
20 10 5
2.5 V 4.0 V
2.5 V 4.0 V
0.5
1
2
5
10
20
50 100 200
500
0.5
1
2
5
10
20
50 100 200
500
ID - Drain Current - mA
Data Sheet D15395EJ2V0DS
ID - Drain Current - mA
3
2SK3503
RDS(on) - Drain to Source On-state Resistance -
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 TA = - 25C Pulsed
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 TA = 25C Pulsed
20
ID = 10 mA 1 mA
20
ID = 10 mA 1 mA
10
10
0
2 3 4 5 6 1 VGS - Gate to Source Voltage - V
7
0
1 2 3 4 5 6 VGS - Gate to Source Voltage - V
7
RDS(on) - Drain to Source On-state Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 30 TA = 75C Pulsed 200
SOURCE TO DRAIN DIODE FORWARD VOLTAGE VGS = 0 V Pulsed
ISD - Diode Forward Current - mA
100 50 20 10 5 2 1 0
20
ID = 10 mA 1 mA
10
0
1 2 3 4 5 6 VGS - Gate to Source Voltage - V
7
0.2 0.4 0.6 0.8 VSD - Source to Drain Voltage - V
1.0
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 50 500
SWITCHING CHARACTERISTICS VDD = 3.0 V VGS = 3.0 V RG = 10 200
td(on), tr, td(off), tf - Switching Time - ns
Ciss, Crss, Coss, - Capacitance - pF
VGS = 0 V f = 1 MHz 20 10 5
tr
Ciss Coss
100 50 tf td(on) 20 td(off)
2 1 Crss
0.5
1 2 5 10 20 VDS - Drain to Source Voltage - V
50
10
20
50 100 200 ID - Drain Current - mA
500
4
Data Sheet D15395EJ2V0DS
2SK3503
* The information in this document is current as of November, 2004. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above).
M8E 02. 11-1

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